Analysis of the emitter charge storage in sige heterojunction bipolar transistors with a lightly doped emitter

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 568-571

  Van Den Oever, L C M ^a   Nanver, L K ^a   Slotboom, J W ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; SILICON ALLOYS; SOLID STATE DEVICES;

CHARGE STORAGE; COLLECTOR CURRENTS; DOPING CONCENTRATION; GUMMEL NUMBER; HIGH INJECTION; HOLE DISTRIBUTION; LIGHTLY DOPED; SIGE HETEROJUNCTION BIPOLAR TRANSISTOR;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0006608220     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194841     Document Type: Conference Paper

References (9)

1. A. Schüppen et al., IEDM 1995, pp. 743-746.
2. L.K. Nanver et al., ESSDERC 1996, pp. 469-472.
3. C.C.G. Visser et al., Mat. Res. Soc. Symp. 1998, Vol. 533, pp.105-110.
4. S. Wilms et al., BCTM 1998, pp. 199-202.
5. H.C. de Graaff et al., Solid-State Electronics, Vol. 19, pp. 809-814, 1976.
6. B. Heinemann et al., Solid-State Electronics, Vol. 38, No. 6, pp. 1183-1189, 1995.
7. J.M. McGregor et al., Solid-State Electronics, Vol. 34, No. 9, pp. 1019-1021, 1991.
8. L.C.M. van den Oever et al., ESSDERC 1997, pp. 540-543.
9. A. Gruhle et al., IEEE Trans. Electron Devices, Vol. 46, No. 7, pp. 1510-1513, 1999.