A physics-based deconstruction of the percolation model of oxide breakdown

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1917-1920

  Sune J ^a   Wu, E Y ^b   Tous, S ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Failure statistics; Microelectronics reliability; Oxide breakdown; Percolation models

Indexed keywords

DATA REDUCTION; GATES (TRANSISTOR); MATHEMATICAL MODELS; MICROELECTRONICS; PERCOLATION (SOLID STATE); STATISTICS;

BREAKDOWN DETECTION; FAILURE STATISTICS; OXIDE BREAKDOWN; PERCOLATION MODELS;

OXIDES;

EID: 34248657004     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.008     Document Type: Article

References (11)

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