SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2089-2092

Oxide interface studies using second harmonic generation

(8) Tolk, N H a Alles, M L a Pasternak, R a Lu, X a Schrimpf, R D a Fleetwood, D M b Dolan, R P c Standley, R W d

a VANDERBILT UNIVERSITY (United States)

b VANDERBILT UNIVERSITY (United States)

c Ibis Technology Corp (United States)

d MEMC Electronic Materials Inc (United States)

Author keywords

Contamination; Interface; Metrology; Non destructive; Roughness; Second harmonic generation

Indexed keywords

CONTAMINATION; HARMONIC GENERATION; INTERFACES (MATERIALS); MEASUREMENT THEORY; NONDESTRUCTIVE EXAMINATION; SILICON ON INSULATOR TECHNOLOGY; SURFACE ROUGHNESS; THIN FILMS;

METALLIC CONTAMINATION; OXIDE INTERFACE STUDIES; THIN FILM SILICON-ON-INSULATOR (SOI) WAFERS;

SILICON COMPOUNDS;

EID: 34248639329 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2007.04.101 Document Type: Article

Times cited : (7)

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