Electron transport in n -doped Si/SiGe quantum cascade structures

Journal of Applied Physics

Volumn 101, Issue 9, 2007, Pages

  Lazic, I ^a,b   Ikonic, Z ^c   Milanovic, V ^a   Kelsall, R W ^c   Indjin, D ^c   Harrison, P ^c  

^a School of Electrical Engineering University of Belgrade

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUPERLATTICES; SURFACE ROUGHNESS;

ALLOY DISORDER; BINDING EXPANSION; CASCADE STRUCTURES; ELECTRON TRANSPORT MODELS; SIZE QUANTIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34248587511     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2722244     Document Type: Conference Paper

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