Study on the behaviors of impurities in cadmium zinc telluride

Journal of Crystal Growth

Volumn 304, Issue 2, 2007, Pages 313-316

  Wang, Tao ^a   Jie, Wanqi ^a   Zhang, Jijun ^a   Yang, Ge ^a   Zeng, Dongmei ^a   Xu, Yadong ^a   Ma, Shuying ^a   Hua, Hui ^a   He, Ke ^b  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b CHANG'AN UNIVERSITY   (China)

Author keywords

A1. Impurities; A1. Segregation; A2. Bridgman technique; B1. Semiconducting II VI materials

Indexed keywords

CADMIUM COMPOUNDS; CRYSTAL IMPURITIES; CURRENT VOLTAGE CHARACTERISTICS; INDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SURFACE SEGREGATION; VOLTAGE MEASUREMENT;

CADMIUM ZINC TELLURIDE; MODIFIED VERTICAL BRIDGMAN (MVB) METHOD;

INGOTS;

EID: 34248581764     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.03.013     Document Type: Article

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