Self-assembled InAs quantum-dot chains on self-formed GaAs mesa-stripes by-molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 10, 2005, Pages 7690-7693

  Kanto, Toru ^a   Yamaguchi, Koichi ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

GaAs; InAs; InGaAs; Mesa stripe; Misfit dislocation; Molecular beam epitaxy; Quantum dot chain; Strain control

Indexed keywords

DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN CONTROL;

INAS; INGAAS; MESA STRIPE; QUANTUM-DOT CHAIN;

SEMICONDUCTOR QUANTUM DOTS;

EID: 31544449709     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7690     Document Type: Article

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