Analysis of Sb-As surface exchange reaction in molecular beam epitaxy of GaSb/GaAs quantum wells

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 6 A, 2005, Pages 3803-3807

  Nakai, Takanori ^a   Yamaguchi, Koichi ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

GaAs; GaSb; Heterointerface; Molecular beam epitaxy; Quantum well; Surface exchange reaction

Indexed keywords

ARSENIC; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SURFACES; THERMAL EFFECTS;

HETEROINTERFACE; SURFACE EXCHANGE; SURFACE EXCHANGE REACTIONS;

MOLECULAR BEAM EPITAXY;

EID: 23944487148     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.3803     Document Type: Article

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