Effects of helium implantation on hydrogen isotope retention behavior in SiC

Journal of Nuclear Materials

Volumn 363-365, Issue 1-3, 2007, Pages 933-937

  Oya, Yasuhisa ^a   Miyauchi, Hideo ^a   Suda, Taichi ^a   Nishikawa, Yusuke ^a   Oda, Takuji ^b   Okuno, Kenji ^a   Tanaka, Satoru ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Hydrogen retention; Hydrogen trapping; Silicon carbide; Thermal desorption; XPS

Indexed keywords

DEUTERIUM; HELIUM; HYDROGEN; SILICON CARBIDE; THERMAL DESORPTION; X RAY PHOTOELECTRON SPECTROSCOPY;

BLISTERS; HELIUM IMPLANTATION; HYDROGEN RETENTION; HYDROGEN TRAPPING; TRAPPING EFFICIENCY;

ION IMPLANTATION;

EID: 34248524332     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnucmat.2007.01.282     Document Type: Article

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