Interaction between hydrogen isotopes and damaged structures produced by He+ implantation in SiC

Fusion Engineering and Design

Volumn 81, Issue 8-14 PART B, 2006, Pages 987-992

  Oya, Y ^a   Onishi, Y ^b   Takeda, T ^b   Kimura, H ^b   Okuno, K ^b   Tanaka, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Helium pre implantation; Hydrogen isotope; Silicon carbide; TDS; XPS

Indexed keywords

HELIUM; HYDROGEN; ION IMPLANTATION; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

HYDROGEN ISOTOPE; TDS;

ISOTOPES;

EID: 32544455686     PISSN: 09203796     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.fusengdes.2005.08.057     Document Type: Article

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