Chemical behavior of energetic deuterium implanted into SiC, Si and graphite

Fusion Technology

Volumn 39, Issue 2, 2001, Pages 905-909

  Iguchi, K ^a   Morimoto, Y ^a   Sugiyama, T ^a   Akahori, S ^a   Okuno, K ^a   Nakamura, H ^b   Nishi, M ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; FUSION REACTORS; GRAPHITE; ION IMPLANTATION; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

THERMAL DESORPTION SPECTROSCOPY (TDS);

DEUTERIUM;

EID: 0035270182     PISSN: 07481896     EISSN: None     Source Type: Journal    
DOI: 10.13182/fst01-a11963355     Document Type: Article

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