Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition

Semiconductors

Volumn 38, Issue 6, 2004, Pages 678-682

  Lundin, W V ^a   Sakharov, A V ^a   Tsatsul'nikov, A F ^a   Zavarin, E E ^a   Besyul'kin, A I ^a   Fomin, A V ^a   Sizov, D S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3042823726     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1766372     Document Type: Article

References (7)

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3. W. V. Lundin, A. V. Sakharov, A. F. Tsatsulnikov, et al., Phys. Status Solidi A 188, 885 (2001).
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5. V. V. Lundin, E. E. Zavarin, A. I. Besyul'kin, et al., in Abstracts of 2nd All-Russian Conference on Gallium, Indium, and Aluminum Nitrides: Structures and Devices (St. Petersburg, 2003), p. 93.
6. A. V. Sakharov, W. V. Lundin, A. S. Usikov, et al., MRS Internet J. Nitride Semicond. Res. 3, 28 (1998).
7. O. E. Tereshchenko, G. É. Shaǐbler, A. S. Yaroshevich, et al., in Abstracts of VI Russian Conference on the Physics of Semiconductors (St. Petersburg, 2003), p. 462.