Trap density imaging of silicon wafers using a lock-in infrared camera technique

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volumn 1, Issue , 2006, Pages 932-935

  Pohl, Peter ^a   Schmidt, Jan ^a   Bothe, Karsten ^a   Brendel, Rolf ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; PASSIVATION; POLYSILICON; SILICON WAFERS;

DISLOCATION DENSITY; INFRARED CAMERAS; SURFACE PASSIVATION LAYERS; TRAP DENSITY;

THERMOGRAPHY (IMAGING);

EID: 41749125200     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279609     Document Type: Conference Paper

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