A two-level prediction model for Deep Reactive Ion Etch (DRIE)

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2005, Pages 491-495

  Sun, H ^a   Hill, T ^a   Taylor, H ^a   Schmidt, M ^a   Boning, D ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP REACTIVE ION ETCH (DRIE); PATTERN DENSITY; WAFER LOADINGS;

ERROR ANALYSIS; MATHEMATICAL MODELS; MICROELECTROMECHANICAL DEVICES; SILICON WAFERS;

REACTIVE ION ETCHING;

EID: 26844440979     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2005.1453974     Document Type: Conference Paper

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