An empirical large signal model for silicon carbide MESFETs

GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium

Volumn 2005, Issue , 2005, Pages 313-316

  Sayed, Ahmed ^a   Boeck, Georg ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISPERSIONS; ELECTRONICS PACKAGING; POWER AMPLIFIERS; SEMICONDUCTOR JUNCTIONS; SIGNAL THEORY; SILICON CARBIDE;

ANGELOV FORMULATION; BIAS DEPENDENT ELEMENTS; LARGE SIGNAL MODELS; ULTRA BROADBAND POWER AMPLIFIER;

MESFET DEVICES;

EID: 33847280581     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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