Current density enhancement at active layer edges in polycrystalline silicon thin-film transistors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 1 A/B, 2001, Pages

  Kimura, M ^a   Nozawa, R ^a   Inoue, S ^a   Shimoda, T ^a  

^a SEIKO EPSON CORPORATION   (Japan)

Author keywords

2 D device simulation; Active layer edge; Carrier density increase; Current density enhancement; Electric field concentration; Polycrystalline silicon; Thin film transistor

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC FIELD MEASUREMENT; GATES (TRANSISTOR); POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTOR DEVICE MODELS;

ACTIVE LAYER EDGE;

THIN FILM TRANSISTORS;

EID: 0035862486     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l26     Document Type: Article

References (7)