Molecular roughness analysis of developed resist by LER method

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 1088-1091

  Ubaldi, M C ^a   Stasi, V ^b   Piccinin, D ^a   Martinelli, M ^a,c  

^a CoreCom ^*  (Italy)

^b Dipartimento di Fisica   (Italy)

^c POLITECNICO DI MILANO   (Italy)

Author keywords

Line edge roughness; Molecular aggregate distribution; Power spectral density method

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL ANALYSIS; DENSITY MEASUREMENT (SPECIFIC GRAVITY); MOLECULAR STRUCTURE; PHOTORESISTS; SCANNING ELECTRON MICROSCOPY; SPECTRUM ANALYSIS;

LINE EDGE ROUGHNESS; MOLECULAR AGGREGATE DISTRIBUTION; POWER SPECTRAL DENSITY METHOD;

ROUGHNESS MEASUREMENT;

EID: 34247569468     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.014     Document Type: Article

References (4)

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3. V. Constantoudis, G.P. Patsis, E. Gogolides, in: D.J. Herr (Ed.), Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, 2003, pp. 901-909.
4. Yamaguchi T., and Namatsu H. J. Vac. Sci. Technol. B 22 (2003) 1037