-
1
-
-
33846249109
-
Comparative performance studies of indium and gold-tin packaged diode laser bars
-
Feb 15
-
D. Lorenzen, M. Schröder, J. Meusel, P. Hennig, H. König, M. Phillippens, J. Sebastian and R Hülsewede, "Comparative performance studies of indium and gold-tin packaged diode laser bars," Proc. Spie Vol. 6104, 610404, Feb 15 (2006)
-
(2006)
Proc. Spie
, vol.6104
, pp. 610404
-
-
Lorenzen, D.1
Schröder, M.2
Meusel, J.3
Hennig, P.4
König, H.5
Phillippens, M.6
Sebastian, J.7
Hülsewede, R.8
-
2
-
-
34247326152
-
-
Spectra-Physics, www.opticsinfo.com , Spectra-Physics Lasers new output power record with Prolite© Diode Laser Bar, Sept. 13 (2006)
-
Spectra-Physics, www.opticsinfo.com , "Spectra-Physics Lasers new output power record with Prolite© Diode Laser Bar," Sept. 13 (2006)
-
-
-
-
3
-
-
34247329585
-
High Brightness Laser Diode Bars
-
N. Lichtenstein, Y. Manz, J. Müller, J. Troger, S. Pawlick, A. Thies, S. Weiß, R. Baettig, C. Harder, "High Brightness Laser Diode Bars," Proc. SPIE Vol. 6104, 61040E-1 (2006)
-
(2006)
Proc. SPIE
, vol.6104
-
-
Lichtenstein, N.1
Manz, Y.2
Müller, J.3
Troger, J.4
Pawlick, S.5
Thies, A.6
Weiß, S.7
Baettig, R.8
Harder, C.9
-
4
-
-
0020735772
-
Energy band-gap shift with elastic strain in GaInP epitaxial layers on (001) GaAs substrates
-
H. Asai and K. Oe, "Energy band-gap shift with elastic strain in GaInP epitaxial layers on (001) GaAs substrates," J. Appl. Phys. 54 (4), 2052-2056, (1983)
-
(1983)
J. Appl. Phys
, vol.54
, Issue.4
, pp. 2052-2056
-
-
Asai, H.1
Oe, K.2
-
6
-
-
33645503858
-
Spectroscopic strain measurement methodology: Degree-of-polarization photoluminescence versus photocurrent spectroscopy
-
J. Tomm, T. Tien, and D. Cassidy, "Spectroscopic strain measurement methodology: Degree-of-polarization photoluminescence versus photocurrent spectroscopy," App. Phys. Lett. 88, 133504, (2006)
-
(2006)
App. Phys. Lett
, vol.88
, pp. 133504
-
-
Tomm, J.1
Tien, T.2
Cassidy, D.3
-
7
-
-
34247339007
-
-
A. Katz, InP and Related Materials: Processing, technology, and devices, Art House, Inc., MA ( 1992)
-
A. Katz, InP and Related Materials: Processing, technology, and devices, Art House, Inc., MA ( 1992)
-
-
-
-
8
-
-
0035356466
-
Band Parameters for III-V compound and their Alloys
-
I. Vurgaftman, J. Meyer and L. Ram-Mohan, "Band Parameters for III-V compound and their Alloys," J. Appl. Phys. 89, 5815 (2001)
-
(2001)
J. Appl. Phys
, vol.89
, pp. 5815
-
-
Vurgaftman, I.1
Meyer, J.2
Ram-Mohan, L.3
-
9
-
-
0029292686
-
Strain measurement and estimation of photoelastic effects and strain induced optical gain change in ridge waveguide lasers
-
April
-
J. Yang and D. Cassidy, "Strain measurement and estimation of photoelastic effects and strain induced optical gain change in ridge waveguide lasers," J. Appl. Phys. 77 (7), 3382-3387, April (1995)
-
(1995)
J. Appl. Phys
, vol.77
, Issue.7
, pp. 3382-3387
-
-
Yang, J.1
Cassidy, D.2
-
11
-
-
0034395254
-
Thermal Boundary Resistance Measurements Using a Transient Thermoreflectance Technique
-
A. Smith J. Hostetler, and P. Norris, "Thermal Boundary Resistance Measurements Using a Transient Thermoreflectance Technique." Microscale Thermophysical Engineering, Vol. 4, No. 1, pp. 51-60, (2000)
-
(2000)
Microscale Thermophysical Engineering
, vol.4
, Issue.1
, pp. 51-60
-
-
Smith, A.1
Hostetler, J.2
Norris, P.3
-
12
-
-
0038166397
-
Quantitative strain analysis in AlGaAs-based devices
-
J. Tomm, A. Gerhardt, R. Muller, M. Biermann, J. Holland, D. Lorenzen, E. Kaulfersch, "Quantitative strain analysis in AlGaAs-based devices," App. Phys. Lett. 82 (23), 4193-4195 (2003)
-
(2003)
App. Phys. Lett
, vol.82
, Issue.23
, pp. 4193-4195
-
-
Tomm, J.1
Gerhardt, A.2
Muller, R.3
Biermann, M.4
Holland, J.5
Lorenzen, D.6
Kaulfersch, E.7
-
13
-
-
7544226079
-
Spectroscopic method of strain analysis in semiconductor quantum well devices
-
M. Biermann, S. Duran, K. Peterson, A. Gerhardt, J. Tomm, A. Bercha, W. Trzeciakowski, "Spectroscopic method of strain analysis in semiconductor quantum well devices," J. Appl. Phys. 96 (8), 4056-4065 (2004)
-
(2004)
J. Appl. Phys
, vol.96
, Issue.8
, pp. 4056-4065
-
-
Biermann, M.1
Duran, S.2
Peterson, K.3
Gerhardt, A.4
Tomm, J.5
Bercha, A.6
Trzeciakowski, W.7
-
14
-
-
3543069408
-
High efficiency, high power 808-nm laser array and stacked arrays optimized for elevated temperature operation
-
P. Crump, T. Crum, M. Devito, J. Farmer, M. Grimshaw, Z. Huang, S. Igl, S. Macomber, P. Thiagarajan and D. Wise, "High efficiency, high power 808-nm laser array and stacked arrays optimized for elevated temperature operation," Proc. SPIE, 5336, 144
-
Proc. SPIE
, vol.5336
, pp. 144
-
-
Crump, P.1
Crum, T.2
Devito, M.3
Farmer, J.4
Grimshaw, M.5
Huang, Z.6
Igl, S.7
Macomber, S.8
Thiagarajan, P.9
Wise, D.10
-
15
-
-
0026135835
-
Bonding Stress Measurements from the Degree of Polarization of Facet Emission of AlGaAs Superluminescent Diodes
-
April
-
P. Colbourne and D Cassidy, "Bonding Stress Measurements from the Degree of Polarization of Facet Emission of AlGaAs Superluminescent Diodes," IEEE J. Quant. Elec. 27(4), 914-920, April (1991)
-
(1991)
IEEE J. Quant. Elec
, vol.27
, Issue.4
, pp. 914-920
-
-
Colbourne, P.1
Cassidy, D.2
|