High efficiency, high power 808-nm laser array and stacked arrays optimized for elevated temperature operation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5336, Issue , 2004, Pages 144-155

  Crump, P A ^a   Crum, T R ^a   DeVito, M ^a   Farmer, J ^a   Grimshaw, M ^a   Huang, Z ^a   Igl, S A ^a   Macomber, S ^a   Thiagarajan, P ^a   Wise, D ^a  

^a NLIGHT CORPORATION   (United States)

Author keywords

808 nm; Elevated temperature; High efficiency; High power; Micro channel cooled bar; Stacked array

Indexed keywords

ELEVATED TEMPERATURE; HIGH EFFICIENCY; HIGH POWER; MICRO-CHANNEL COOLED BAR; STACKED ARRAY;

ARRAYS; HEAT SINKS; RELIABILITY; SENSITIVITY ANALYSIS; THERMAL EFFECTS;

SEMICONDUCTOR LASERS;

EID: 3543069408     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.533262     Document Type: Conference Paper

References (9)

1. M. Jansen, P. Bournes, P. Corvini, F. Fang, M. Finander, M. Hmelar, T. Johnston, C. Jordan, R. Nabiev, J. Nightingale, M. Widman, H. Asonen, J. Aarik, A. Salokatve, J. Nappi and K. Rakennus, "High performance laser diode bars with Aluminum-free active regions", Optics Express, vol. 4, no. 1, pp. 3-11, 1999.
2. J. Sebastian, G. Beister, F. Brugge, F. Buhrandt, G. Erbert, H.G. Hansel, R. Hulsewede, A. Knauer, W. Pitroff, R. Staske, M. Schroder, H. Wenzel, M. Weyers, G. Trankle, "High Power 810-nm GaAsP-AlGaAs Diode Lasers with Narrow Beam Divergence" IEEE Selected Topics in Quantum Electronics, vol. 7 no. 2, pp. 334-339, 2001.
3. E.P. O'Reilly, A. Ghiti, "Valence band engineering in quantum well lasers", in Quantum Well Lasers, P. Zory editor, (Academic Press, SanDiego, 1993).
4. J. Wang, B. Smith, X. Xie, X. Wang, G.T. Burnham "High Efficiency diode lasers at high output power" Applied Physics Letters, vol. 74, no. 11, pp. 1525-1527, 1999.
5. W.C. Tang, H.J. Rosen, P. Vettiger, D.J. Webb "Evidence for current density induced heating of AlGaAs single quantum well laser facets" Applied Physics Letters vol 59, no 9, pp1005-1007, 1991.
6. 0.5P heterostructures and quantum-well laser diodes" IEEE J. Quantum Electronics, vol. 30, no. 2, pp. 593-606, 1994.
7. 0.5P multiple quantum wells", IEEE J. Quantum Electronics, vol. 34, no. 1, pp. 93-100, 1998.
8. Optical Processes in Semiconductors, J. I. Pankove, (Prentice-Hall, Englewood Cliffs, 1971, Dover, New York, 1975), pg. 239.
9. R. Stakse, J. Sebastien, J. Wenzel, G. Erbert, H.G. Hansel, "Influence of mounting stress on polarization degree of electroluminescence of laser diode bars", IEEE Lasers and Electro-Optics Society 13th Annual Meeting, 13-16 November 2000, The Westin RioMar Beach, Rio Grande, Puerto Rico, pp. 10-15.