Electron transport in self-switching nano-diodes

Journal of Computational Electronics

Volumn 6, Issue 1-3, 2007, Pages 59-62

  Xu, Kun Yuan ^a   Wang, Gang ^a   Song, Ai Min ^b  

^a SUN YAT SEN UNIVERSITY   (China)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Diode like; Geometric asymmetry; Monte Carlo simulations; Surface states; Threshold voltage

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; MONTE CARLO METHODS; NANOELECTRONICS; NANOWIRES; SEMICONDUCTOR DEVICE MANUFACTURE; SWITCHING; THRESHOLD VOLTAGE;

GEOMETRIC ASYMMETRY; INTRINSIC PROPERTY; SELF-SWITCHING NANO-DIODES;

SEMICONDUCTOR DIODES;

EID: 34247375092     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-006-0048-z     Document Type: Article

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