-
1
-
-
0141634015
-
Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device
-
A.M. Song, M. Missous, P. Omling, A.R. Peaker, L. Samuelson, and W. Seifert, "Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device," Appl. Phys. Lett., vol. 83, pp. 1881-1883, 2003.
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 1881-1883
-
-
Song, A.M.1
Missous, M.2
Omling, P.3
Peaker, A.R.4
Samuelson, L.5
Seifert, W.6
-
2
-
-
0032614415
-
Self-gating effect in the electron Y-branch switch
-
J. O. Wesström, "Self-gating effect in the electron Y-branch switch, "Phys. Rev. Lett., vol. 82, pp. 2564-2567, 1999.
-
(1999)
Phys. Rev. Lett.
, vol.82
, pp. 2564-2567
-
-
Wesström, J.O.1
-
3
-
-
0000034227
-
Formalism of nonlinear transport in mesoscopic conductors
-
A. M. Song, "Formalism of nonlinear transport in mesoscopic conductors," Phys. Rev. B, vol. 59, pp. 9806-9809, 1999.
-
(1999)
Phys. Rev. B
, vol.59
, pp. 9806-9809
-
-
Song, A.M.1
-
4
-
-
0035794337
-
Electrical properties of three-terminal ballistic junctions
-
H.Q. Xu, "Electrical properties of three-terminal ballistic junctions," Appl. Phys. Lett., vol. 78, pp. 2064-2066, 2001._,
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 2064-2066
-
-
Xu, H.Q.1
-
5
-
-
0036492866
-
A novel electrical property of three-terminal ballistic junctions and its applications to nanoelectronics
-
"A novel electrical property of three-terminal ballistic junctions and its applications to nanoelectronics," Physica E, vol. 13, pp. 942-945, 2002.
-
(2002)
Physica E
, vol.13
, pp. 942-945
-
-
-
6
-
-
0000216412
-
Spatial variation of currents and fields due to localized scatterers in metallic conduction
-
R. Landauer, "Spatial variation of currents and fields due to localized scatterers in metallic conduction," IBM J. Res. Dev., vol. 1, pp. 223-231, 1957.
-
(1957)
IBM J. Res. Dev
, vol.1
, pp. 223-231
-
-
Landauer, R.1
-
7
-
-
33749406012
-
4 terminal phase coherent conductance
-
M. Büttiker, "4 terminal phase coherent conductance," Phys. Rev. Lett., vol. 57, pp. 1761-1764, 1986.
-
(1986)
Phys. Rev. Lett.
, vol.57
, pp. 1761-1764
-
-
Büttiker, M.1
-
8
-
-
0037293761
-
Ballistic nanodevices for THz data processing: Monte Carlo simulations
-
J. Mateos, B.G. Vasallo, D. Pardo, T. González, J. S. Galloo, Y. Roelens, S. Bollaert, and A. Cappy, "Ballistic nanodevices for THz data processing: Monte Carlo simulations," Nanotechnology, vol. 14, pp. 117-122, 2003.
-
(2003)
Nanotechnology
, vol.14
, pp. 117-122
-
-
Mateos, J.1
Vasallo, B.G.2
Pardo, D.3
González, T.4
Galloo, J.S.5
Roelens, Y.6
Bollaert, S.7
Cappy, A.8
-
9
-
-
0042912823
-
Microscopic modelling of nonlinear transport in ballistic nanodevices
-
J. Mateos, B.G. Vasallo, D. Pardo, T. González, J. S. Galloo, S. Bollaert, Y. Roelens and A. Cappy, "Microscopic modelling of nonlinear transport in ballistic nanodevices," IEEE Trans. Electron Devices, vol. 50, pp. 1897-1905, 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, pp. 1897-1905
-
-
Mateos, J.1
Vasallo, B.G.2
Pardo, D.3
González, T.4
Galloo, J.S.5
Bollaert, S.6
Roelens, Y.7
Cappy, A.8
-
10
-
-
20844438277
-
Non-linear effects in T-branch junctions
-
J. Mateos, B.G. Vasallo, D. Pardo, T. González, E. Pichonat, J. S. Galloo, S. Bollaert, Y. Roelens and A. Cappy, "Non-linear effects in T-branch junctions," IEEE Electron Device Letters, vol. 51, pp. 521-523, 2004.
-
(2004)
IEEE Electron Device Letters
, vol.51
, pp. 521-523
-
-
Mateos, J.1
Vasallo, B.G.2
Pardo, D.3
González, T.4
Pichonat, E.5
Galloo, J.S.6
Bollaert, S.7
Roelens, Y.8
Cappy, A.9
-
11
-
-
1942420764
-
Room temperature nonlinear transport in ballistic nanodevices
-
T. Gonzalez, B.G. Vasallo, D. Pardo and J. Mateos, "Room temperature nonlinear transport in ballistic nanodevices," Semiconductor Science and Technology, vol. 19, pp. S125-S127, 2004.
-
(2004)
Semiconductor Science and Technology
, vol.19
-
-
Gonzalez, T.1
Vasallo, B.G.2
Pardo, D.3
Mateos, J.4
-
12
-
-
2342569048
-
Monte Carlo analysis of four-terminal ballistic rectifiers
-
B.G. Vasallo, T. González, D. Pardo and J. Mateos, "Monte Carlo analysis of four-terminal ballistic rectifiers," Nanotechnology, vol. 15, pp. S250-S253, 2004.
-
(2004)
Nanotechnology
, vol.15
-
-
Vasallo, B.G.1
González, T.2
Pardo, D.3
Mateos, J.4
-
13
-
-
0033909161
-
Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMTs
-
J. Mateos, T. González, D. Pardo, V. Hoel and A. Cappy, "Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMTs," IEEE Trans. Electron Devices, vol. 47, pp. 250-253, 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 250-253
-
-
Mateos, J.1
González, T.2
Pardo, D.3
Hoel, V.4
Cappy, A.5
-
14
-
-
18344407454
-
Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis
-
J. Mateos, T. González, D. Pardo, V. Hoel and A. Cappy, "Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis," Semicond. Sci. Technol., vol. 14, pp. 864-870, 1999.
-
(1999)
Semicond. Sci. Technol
, vol.14
, pp. 864-870
-
-
Mateos, J.1
González, T.2
Pardo, D.3
Hoel, V.4
Cappy, A.5
-
15
-
-
0034297790
-
Monte Carlo simulator for the design optimization of low-noise HEMTs
-
J. Mateos, T. Gonzalez, D. Pardo, V. Hoel and A. Cappy, "Monte Carlo simulator for the design optimization of low-noise HEMTs," IEEE Trans. Electron Devices, vol. 47, pp. 1950-1956, 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 1950-1956
-
-
Mateos, J.1
Gonzalez, T.2
Pardo, D.3
Hoel, V.4
Cappy, A.5
-
16
-
-
0043040370
-
Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport
-
T. González, O. M. Bulashenko, J. Mateos, D. Pardo and L. Reggiani, "Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport," Phys. Rev. B, vol. 56, pp. 6424-6427, 1997. _,
-
(1997)
Phys. Rev. B
, vol.56
, pp. 6424-6427
-
-
González, T.1
Bulashenko, O.M.2
Mateos, J.3
Pardo, D.4
Reggiani, L.5
-
17
-
-
0032116390
-
Microscopic analysis of shot-noise suppression in nondegenerate ballistic transport
-
"Microscopic analysis of shot-noise suppression in nondegenerate ballistic transport", Semicond. Sci. Technol., vol. 13, pp. 714-724, 1998.
-
(1998)
Semicond. Sci. Technol
, vol.13
, pp. 714-724
-
-
|