Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors

Applied Physics Letters

Volumn 90, Issue 16, 2007, Pages

  Mizuno, Yosuke ^a   Ohya, Shinobu ^a,b   Hai, Pham Nam ^a   Tanaka, Masaaki ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; MAGNETORESISTANCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSPORT PROPERTIES;

CURRENT AMPLIFICATION; CURRENT TRANSFER RATIO; HOT-CARRIER TRANSISTORS; RESONANT TUNNELING EFFECTS;

TRANSISTORS;

EID: 34247340581     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2724771     Document Type: Article

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