Room-temperature stability study in silicon base magnetic tunneling transistor

IEEE Transactions on Magnetics

Volumn 41, Issue 10, 2005, Pages 2682-2684

  Huang, Y W ^a   Lo, C K ^a   Yao, Y D ^b,c   Hsieh, L C ^a   Huang, D R ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b INSTITUTE OF PHYSICS   (Taiwan)

^c NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

Author keywords

Magnetic tunneling; P n junction; Stability; Transistor

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS;

MAGNETIC TUNNELING; P-N JUNCTIONS; ROOM TEMPERATURE STABILITY; SPIN TUNNELING TRANSITORS (STT);

TUNNEL JUNCTIONS;

EID: 27744476519     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2005.855293     Document Type: Article

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