Electron transport through hierarchical self-assembly of GaAs/Al xGa 1-xAs quantum dots

Journal of Applied Physics

Volumn 98, Issue 8, 2005, Pages

  Li, Shu Shen ^a,b   Xia, Jian Bai ^a,b   Hirose, Kenji ^c  

^a CCAST WORLD LABORATORY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER WIDTHS; CONDUCTANCE PEAKS; COUPLED-CHANNEL RECURSION METHODS; GAAS QUANTUM WELLS;

ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; PHOTOELECTRIC DEVICES; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 27744432864     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2108152     Document Type: Article

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