SCOPUS 정보 검색 플랫폼

Volumn 6, Issue 46, 1994, Pages 10025-10030

Effect of the Gamma -X crossover on the binding energies of confined donors in single GaAs/AlxGa1-xAs quantum-well microstructures

(1) Elabsy, A M a

a UNITED ARAB EMIRATES UNIVERSITY (United Arab Emirates)

Author keywords

[No Author keywords available]

Indexed keywords

CROSSOVER PRESSURE; EFFECTIVE MASS; HAMILTONIAN;

BINDING ENERGY; ELECTRONS; FORECASTING; HYDROSTATIC PRESSURE; LOW TEMPERATURE OPERATIONS; PERMITTIVITY; PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0028548814 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/6/46/019 Document Type: Article

Times cited : (144)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.