Effects of the fabrication processes of NC-Si:H films on their mechanical properties

Chinese Journal of Aeronautics

Volumn 19, Issue SUPPL., 2006, Pages

  Lin, Jin Zhao ^a   Wang, Jin Liang ^a   Zhou, Bo ^a   Wu, Er Xing ^a  

^a BEIHANG UNIVERSITY   (China)

Author keywords

Hardness; Modulus; Nanoindentation; Nc Si:H; Plasma enhanced chemical vapor deposition (PECVD)

Indexed keywords

CRYSTALLINE MATERIALS; GRAIN SIZE AND SHAPE; HARDNESS; NANOINDENTATION; SEMICONDUCTING SILICON; VOLUME FRACTION;

CRYSTALLINE VOLUME FRACTION; GLASS SUBSTRATES; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 34247106720     PISSN: 10009361     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. Vinci R P V, Vlassak J J. Mechanical behavior of thin films. Annu Rev Mater Sci 1996; 26: 431-462.
2. Pharr C M, Oliver W C. Measurement of thin films by micromechanical techniques. MRS Bulletin 1992; 17(7): 28-33.
3. Schweilz J A. Mechanical characterization of thin films by micromechanical techniques. MRS Bulletin 1992; 17(7): 34-45.
4. Chen L Q, Zhao M H, Zhang T Y. The testing method of mechanical properties of thin films. Journal of Mechanical Strength 2001; 23(4). [in Chinese]
5. Zhang T H, Yang Y M. Nano-hardness tester and its application in MEMS. Advances in Mechanics 2002; 32(3). [in Chinese]
6. Peng Y C, Zhao X W, Fu G S.21 century-oriented nanoelectronics. Chin Sci Bull. 2002; 47: 712-715. [in Chinese]
7. Ma S Y, Qin G G, You L P, et al. Comparative study on photoluminescence from Si-containing silicon oxide films and Ge-containing silicon oxide films. Acta Phys Sin 2001; 50: 1580-1584. [in Chinese]
8. Zhu M F, Chen G, Xu H Z, et al. Green/Blue light emission and luminescent mechanism of nanocrystalline silicon embedded in silicon oxide thin film. Acta Phys Sin 1997; 46: 1645-1648.[in Chinese]
9. Wang Y Q, Chen W D, Chen C Y, et al. Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film. Acta Phys Sin 2002; 51: 1564-1566. [in Chinese]
10. Yue G Z, Han D X, Williamson D L, et al. Electronic states of intrinsic layers in n-i-p solar cells near amorphous to microcrystalline silicon transition studied by photoluminescence spectroscopy. Appl Phys Lett 2000; 77(20): 3185-3187.
11. Xu G Y, Wang T M. Study on intrinsic stress of nc-Si:H film. Semicond Sci Technol 2000; 15: 613-618.
12. Zhang T H, Yang Y M, Zhao Y P, et al. Measurement of mechanical properties of MEMS materials. Advances in Mechanics 2002; 32(4). [in Chinese]