GaAs surface passivation by ultra-thin epitaxial GaP layer and surface As-P exchange

Applied Surface Science

Volumn 253, Issue 14, 2007, Pages 6232-6235

  Aierken, A ^a   Riikonen, J ^a   Mattila, M ^a   Hakkarainen, T ^a   Sopanen, M ^a   Lipsanen, H ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

GaAs; MOVPE; Quantum wells; Surface passivation

Indexed keywords

OPTICAL PROPERTIES; OPTIMIZATION; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SURFACE MORPHOLOGY; SURFACE PHENOMENA; VAPOR PHASE EPITAXY;

MAGNITUDE; METAL ORGANIC VAPOR PHASE EPITAXY (MOVPE); SMOOTH SURFACE MORPHOLOGIES; SURFACE PASSIVATION;

ULTRATHIN FILMS;

EID: 34247098864     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.01.069     Document Type: Article

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