Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy

Journal of the Korean Physical Society

Volumn 50, Issue 3, 2007, Pages 763-766

  Jung, S I ^a   Yeo, H Y ^a   Yun, I ^a   Han, I K ^b   Cho, S M ^c   Lee, J I ^d  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Sungkyunkwan University   (South Korea)

^d Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Electroluminescence; Near field scanning optical microscopy; Quantum dot laser diode

Indexed keywords

EID: 34147169381     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.50.763     Document Type: Article

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