Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD

Microelectronics Journal

Volumn 38, Issue 3, 2007, Pages 398-400

  Zhang, Tiemin ^a,b   Miao, Guoqing ^a   Jin, Yixin ^a   Xie, Jianchun ^a,b   Jiang, Hong ^a   Li, Zhiming ^a   Song, Hang ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Buffer layer; In0.82Ga0.18As; MOCVD

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE QUALITY; LOW PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION (LP-MOCVD);

BUFFER LAYERS;

EID: 34147142289     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.01.015     Document Type: Article

References (13)

1. Hoogeveen R.W.M., van der A R.J., and Goede A.P.H. Infrared Phys. Technol. 42 (2001) 1-16
2. Zhang Z.C., Yang S.Y., Zhang F.Q., Xu B., Zeng Y.P., Chen Y.H., and Wang Z.G. J. Cryst. Growth 247 (2003) 126-130
3. Chai Y.G., and Chow R. J. Appl. Phys. 53 (1982) 1229-1232
4. Scott M.D., Moore A.H., Moseley A.J., and Wallis R.H. J. Cryst. Growth 77 (1986) 606-612
5. di Forte-Poisson M.A., Brylinski C., di Persio J., Hugon X., Vilotitch B., and Le Noble C. J. Cryst. Growth 124 (1992) 782-791
6. Wada M., and Hosomatsu H. Appl. Phys. Lett. 64 (1994) 1265-1267
7. Ko H.J., Chen Y.F., Ko J.M., Hanada T., Zhu Z., Fukuda T., and Yao T. J. Cryst. Growth 207 (1999) 87-94
8. Chen H., Guo L.W., Cui Q., Hu Q., Huang Q., and Zhou J.M. J. Appl. Phys. 79 (1996) 1167-1169
9. Shih C.F., Chen N.C., Lin S.Y., and Liu K.S. Appl. Phys. Lett. 86 (2005) 211103-1-211103-3
10. Akasaki I. J. Cryst. Growth 237-239 (2002) 905-911
11. Yuan H.-r., Chua S.-J., Miao Z.-l., Dong J., and Wang Y. J. Cryst. Growth 273 (2004) 63-67
12. Gao W., Berger P.R., Ervin M.H., Pamulapati J., Lareau R.T., and Schauer S. J. Appl. Phys. 80 (1996) 7094-7103
13. D'Hondt M., Moerman I., Van Daele P., and Demeester P. IEE Proc. Optoelectron. 144 (1997) 277-282