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Volumn 144, Issue 5, 1997, Pages 277-282

Influence of buffer layer and processing on the dark current of 2. 5 Jim-wavelength 2%-mismatched InGaAs photodetectors

Author keywords

Buffer layers; Dark current; InGaAs detectors

Indexed keywords

CRYSTAL LATTICES; INTERFACES (MATERIALS); SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

EID: 0031245794     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19971412     Document Type: Article
Times cited : (29)

References (10)
  • 1
    • 0346955939 scopus 로고
    • 'Defects in epitaxial multilayers'
    • MATTHEWS, J. W., and BLAKESLEE, A. E. : 'Defects in epitaxial multilayers', Cryst. Growth J., 1974, 27, pp. 118-125
    • (1974) Cryst. Growth J. , vol.27 , pp. 118-125
    • Matthews, J.W.1    Blakeslee, A.E.2
  • 2
    • 0022795885 scopus 로고
    • 'High-efficiency, low-leakage MOCVD-grown GalnAs/All-nAs heterojunction photodiodes "for detection to 2. 4 im'
    • MOSELEY, A. J., SCOTT, M. D., MOORE, A. H., and WALLIS, R. H. : 'High-efficiency, low-leakage MOCVD-grown GalnAs/All-nAs heterojunction photodiodes "for detection to 2. 4 [im', Electron. Lett., 1986, 22, (22), pp. 1206-1207
    • (1986) Electron. Lett. , vol.22 , Issue.22 , pp. 1206-1207
    • Moseley, A.J.1    Scott, M.D.2    Moore, A.H.3    Wallis, R.H.4
  • 4
    • 0026903706 scopus 로고
    • 'Dark current analysis and characterization of InjGa-4jAs/InASjPi. j, graded photodiodes with x > 0. 53 for response to longer wavelengths (> 1. 7 tun)'
    • LINGA, K. R., OLSEN, G. H., BAN, V. S., JOSHI, A. M., and KOSONOCKY, W. F. : 'Dark current analysis and characterization of InjGa-4jAs/InASjPi. j, graded photodiodes with x > 0. 53 for response to longer wavelengths (> 1. 7 tun)', J. Lightwave Tectmol., 1992, 10, (8), pp. 1050-1055
    • (1992) J. Lightwave Tectmol. , vol.10 , Issue.8 , pp. 1050-1055
    • Linga, K.R.1    Olsen, G.H.2    Ban, V.S.3    Joshi, A.M.4    Kosonocky, W.F.5
  • 6
    • 0028767290 scopus 로고
    • 'Wide wavelength and low dark current lattice-mismatched InGaAs/InAsP photodiodes grown by metalorganic vapor-phase epitaxy'
    • WADA, M., and HOSOMATSU, H. : 'Wide wavelength and low dark current lattice-mismatched InGaAs/InAsP photodiodes grown by metalorganic vapor-phase epitaxy', Appl. Phys. Lett., 1994, 64, (10), pp. 1265-1267
    • (1994) Appl. Phys. Lett. , vol.64 , Issue.10 , pp. 1265-1267
    • Wada, M.1    Hosomatsu, H.2
  • 8
    • 0030687699 scopus 로고    scopus 로고
    • 'Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth temperatures'
    • D'HONDT, M., MOERMAN, I., and DEMEESTER, P. : 'Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth temperatures', Cryst. Growth J. . 1997, 170, pp. 616-620
    • (1997) Cryst. Growth J. . , vol.170 , pp. 616-620
    • D'Hondt, M.1    Moerman, I.2    Demeester, P.3
  • 9
    • 0001483114 scopus 로고
    • 'Zinc diffusion in InP using diethylzinc and phosphine'
    • WISSER, J., GLADE, M., SCHMIDT, H. J., and HEIME, K. : 'Zinc diffusion in InP using diethylzinc and phosphine', Appl. Phys. J., 1992, 71, (7), pp. 3234-3237
    • (1992) Appl. Phys. J. , vol.71 , Issue.7 , pp. 3234-3237
    • Wisser, J.1    Glade, M.2    Schmidt, H.J.3    Heime, K.4
  • 10
    • 0024755447 scopus 로고
    • 'Zn diffusion into InP using dimethylzinc as Zn source'
    • WADA, M., SEKO, M., SAKAKIBARA, K., and SEKIGUCHI, Y. : 'Zn diffusion into InP using dimethylzinc as Zn source', Appl. Phys. Jap. J., 1989, 28, (10), pp. L1700-L1703
    • (1989) Appl. Phys. Jap. J. , vol.28 , Issue.10
    • Wada, M.1    Seko, M.2    Sakakibara, K.3    Sekiguchi, Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.