Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate oxides

Solid-State Electronics

Volumn 51, Issue 4 SPEC. ISS., 2007, Pages 633-637

  Contaret, Thierry ^a   Boutchacha, Touati ^b   Ghibaudo, Gérard ^c   Bœuf, Frédéric ^d   Skotnicki, Thomas ^d  

^a CNRS   (France)

^b UNIVERSITÉ DES SCIENCES ET DE LA TECHNOLOGIE D ORAN MOHAMED BOUDIAF   (Algeria)

^c IMEP LAHC   (France)

^d STMICROELECTRONICS   (France)

Author keywords

Excess LF noise; Gate leakage current noise; Ge in diffusion; Oxide trap density; Si0.8Ge0.2 substrate; Tensely strain channel; Ultrathin gate oxides

Indexed keywords

GATES (TRANSISTOR); GEOMETRY; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE;

GATE-LEAKAGE CURRENT NOISE; OXIDE TRAP DENSITY; TENSELY STRAIN CHANNEL; ULTRATHIN GATE OXIDES;

MOSFET DEVICES;

EID: 34047265286     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.02.007     Document Type: Article

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