Chemical vapor deposition of RuO2 thin films using the liquid precursor Ru(OD)3

Electrochemical and Solid-State Letters

Volumn 2, Issue 12, 1999, Pages 622-623

  Lee, Jung Hyun ^a   Kim, Joo Young ^a   Rhee, Shi Woo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; MORPHOLOGY; OXYGEN; RUTHENIUM COMPOUNDS; THERMOANALYSIS; THERMODYNAMIC STABILITY; THIN FILMS;

LIQUID PRECURSORS;

METALLIC FILMS;

EID: 0033284426     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390927     Document Type: Article

References (7)

1. M. L. Green, M. E. Gross, L. E. Papa, K. J. Schnoes, and D. Brasen, J. Electrochem. Soc., 132, 2677 (1985).
2. L. Krusin-Elbaum, M. Wittmer, and D. S. Yee, Appl. Phys. Lett., 50, 1879 (1987).
3. R. G. Vadimsky, R. P. Frankenthal, and D. E. Thompson. J. Electrochem. Soc., 126, 2017 (1979).
4. E. Kolawa, F. C. T. So, E. T. Pan, and M. Nicolet, Appl. Phys. Lett., 50, 854 (1987).
5. J. Vetrone, C. M. Foster, G-R. Bai, and A. Wang, J. Mater. Res., 13, 2281 (1998).
6. J. M. Lee, J. C. Shin, C. S. Hwang, and H. J. Kim, J. Vac. Sci. Technol., A, 16, 2768 (1998).
7. S. Y. Mar, Y. S. Huang, and K. K. Tiong, Thin Solid Films, 258, 104 (1995).