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Volumn 24, Issue 3, 2007, Pages 696-701

Effect of line and trench profile variation on specular and diffuse reflectance from a periodic structure

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; EDGE DETECTION; REFLECTION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

EID: 34047181113     PISSN: 10847529     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOSAA.24.000696     Document Type: Article
Times cited : (37)

References (12)
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  • 4
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    • "Ellipsometric scatterometry for the metrology of sub-0.1-μm-linewidth structures"
    • B. K. Minhas, S. A. Coulombe, S. S. H. Naqvi, and J. R. McNeil, "Ellipsometric scatterometry for the metrology of sub-0.1-μm-linewidth structures," Appl. Opt. 37, 5112-5115 (1998).
    • (1998) Appl. Opt. , vol.37 , pp. 5112-5115
    • Minhas, B.K.1    Coulombe, S.A.2    Naqvi, S.S.H.3    McNeil, J.R.4
  • 6
    • 0040158811 scopus 로고    scopus 로고
    • "Normal-incidence spectroscopic ellipsometry for critical dimension monitoring"
    • H.-T. Huang, W. Kong, and F. L. Terry, Jr., "Normal-incidence spectroscopic ellipsometry for critical dimension monitoring," Appl. Phys. Lett. 78, 3983-3985 (2001).
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 3983-3985
    • Huang, H.-T.1    Kong, W.2    Terry Jr., F.L.3
  • 8
    • 0029346243 scopus 로고
    • "Metrology of subwavelength photoresist gratings using optical scatterometry"
    • C. J. Raymond, M. R. Murnane, S. S. H. Naqvi, and J. R. McNeil, "Metrology of subwavelength photoresist gratings using optical scatterometry," J. Vac. Sci. Technol. B 13, 1484-1495 (1995).
    • (1995) J. Vac. Sci. Technol. B , vol.13 , pp. 1484-1495
    • Raymond, C.J.1    Murnane, M.R.2    Naqvi, S.S.H.3    McNeil, J.R.4
  • 9
    • 33745629315 scopus 로고    scopus 로고
    • "A comprehensive test of optical scatterometry readiness for 65 nm technology production"
    • in C. N. Archie, ed., Proc. SPIE 61521G-1
    • V. A. Ukraintsev, "A comprehensive test of optical scatterometry readiness for 65 nm technology production," in Metrology, Inspection, and Process Control for Microlithography XX, C. N. Archie, ed., Proc. SPIE 6152, 61521G-1 (2006).
    • (2006) Metrology, Inspection, and Process Control for Microlithography XX , vol.6152
    • Ukraintsev, V.A.1
  • 10
    • 0029307028 scopus 로고
    • "Formulation for stable and efficient implementation of the rigorous coupled-wave analysis of binary gratings"
    • M. G. Moharam, E. B. Grann, D. A. Pommet, and T. K. Gaylord, "Formulation for stable and efficient implementation of the rigorous coupled-wave analysis of binary gratings," J. Opt. Soc. Am. A 12, 1068-1076 (1995).
    • (1995) J. Opt. Soc. Am. A , vol.12 , pp. 1068-1076
    • Moharam, M.G.1    Grann, E.B.2    Pommet, D.A.3    Gaylord, T.K.4
  • 11
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    • "Stable implementation of the rigorous coupled-wave analysis for surface-relief gratings: Enhanced transmittance matrix approach"
    • M. G. Moharam, D. A. Pommet, E. B. Grann, and T. K. Gaylord, "Stable implementation of the rigorous coupled-wave analysis for surface-relief gratings: enhanced transmittance matrix approach," J. Opt. Soc. Am. A 12, 1077-1086 (1995).
    • (1995) J. Opt. Soc. Am. A , vol.12 , pp. 1077-1086
    • Moharam, M.G.1    Pommet, D.A.2    Grann, E.B.3    Gaylord, T.K.4
  • 12
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    • "Highly improved convergence of the couple-wave method for TM polarization"
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.