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Volumn 17, Issue 4, 2004, Pages 564-572

Line-profile and critical-dimension monitoring using a normal incidence optical CD metrology

Author keywords

Critical dimension (CD); Diffraction; Optical critical dimension (OCD); Optical metrology; Process control

Indexed keywords

COMPUTATIONAL METHODS; DIFFRACTION GRATINGS; ELECTROMAGNETIC WAVE DIFFRACTION; ELECTROMAGNETIC WAVE SCATTERING; PROCESS CONTROL; SCANNING ELECTRON MICROSCOPY;

EID: 9144243805     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2004.835728     Document Type: Article
Times cited : (25)

References (9)
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  • 8
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    • Normal incidence spectroscopic ellipsometry for critical dimension monitoring
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  • 9
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.