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Shimane, Japan, Oct. presented
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2
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0029276373
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Ultraviolet-visible ellipsometry for process control during the etching of submicrometer features
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N. Blayo, R. A. Cirelli, F. P. Klemens, and J. T. C. Lee, "Ultraviolet-visible ellipsometry for process control during the etching of submicrometer features," J. Opt. Soc. Amer. A, vol. 12, p. 591, 1995.
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Specular spectroscopic scatterometry
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Niu, X.1
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Etch depth estimation of large-period silicon gratings with multivariate calibration of rigorously simulated diffraction profiles
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Naqvi, S.S.H.1
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Metrology of subwavelength photoresist gratings using optical scatterometry
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C. J. Raymond, M. R. Murnane, S. S. H. Naqvi, and J. R. McNeil, "Metrology of subwavelength photoresist gratings using optical scatterometry," J. Vac. Sci. Technol. B, vol. 13, no. 4, p. 1484, 1995.
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Diffraction analysis of dielectric surface-relief gratings
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Oct.
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0029306568
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Stable implementation of the rigorous coupled-wave analysis for surface-relief gratings: Enhanced transmittance matrix approach
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May
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M. G. Moharam, D. A. Pommet, E. B. Grann, and T. K. Gaylord, "Stable implementation of the rigorous coupled-wave analysis for surface-relief gratings: Enhanced transmittance matrix approach," J. Opt. Soc. Amer. A, vol. 12, no. 5, pp. 1077-1086, May 1995.
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8
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0040158811
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Normal incidence spectroscopic ellipsometry for critical dimension monitoring
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June
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H.-T. Huang, W. Kong, and F. L. Terry, "Normal incidence spectroscopic ellipsometry for critical dimension monitoring," Appl. Phys. Lett., vol. 78, no. 25. p. 3983, June 2001.
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Huang, H.-T.1
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0005010803
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Critical dimension and profile measurement by optical scatterometry for sub-0.15 μm advanced gate and shallow trench isolation structures
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San Francisco. CA. presented
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D. Mui, H. Sasano, W. Liu, J. Kretz, J. Yamartino, M. Barnes, and K. Fairbairn, "Critical dimension and profile measurement by optical scatterometry for sub-0.15 μm advanced gate and shallow trench isolation structures," in Proc. AVS 48th Symp., San Francisco. CA, 2001. presented.
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Mui, D.1
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