Noise characteristics of 100 nm scale GaAs/AlxGa1-xAs scanning Hall probes

Applied Physics Letters

Volumn 90, Issue 13, 2007, Pages

  Hicks, C W ^a   Luan, L ^a   Moler, K A ^a   Zeldov, E ^b   Shtrikman, H ^b  

^a STANFORD UNIVERSITY   (United States)

^b WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

FLUX SENSITIVITY; SCANNING HALL PROBES; TELEGRAPH NOISE;

ELECTRIC VARIABLES MEASUREMENT; GATE DIELECTRICS; GAUSSIAN NOISE (ELECTRONIC); MAGNETIC FIELD EFFECTS; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; TWO DIMENSIONAL ELECTRON GAS;

HALL EFFECT;

EID: 34047160433     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2717565     Document Type: Article

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