Approaching the pT range with a 2DEG InGaAs/InP Hall sensor at 77 K

Microelectronic Engineering

Volumn 51, Issue , 2000, Pages 333-342

  Cambel, Vladimír ^a   Karapetrov, Goran ^b   Eliáš, Peter ^a   Hasenöhrl, Stanislav ^a   Kwok, Wai Kwong ^b   Krause, Jochen ^c   Maňka, Ján ^d  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d INSTITUTE OF MEASUREMENT SCIENCE   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON GAS; HETEROJUNCTIONS; MAGNETIC FIELDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE; TEMPERATURE; TWO DIMENSIONAL;

BIAS CURRENT; HALL SENSOR;

HALL EFFECT DEVICES;

EID: 0033690558     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00491-8     Document Type: Article

References (10)

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