Analysis of the spurious negative resistance of PN junction avalanche breakdown

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 230-236

  Hong, Sung Joon ^a   Kim, Jae Joon ^a   Park, Young June ^a   Min, Hong Shick ^a  

^a Seoul National University   (South Korea)

Author keywords

Ionization; P n junctions; Silicon devices; Simulation

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; HOT CARRIERS; IMPACT IONIZATION; NEGATIVE RESISTANCE; SEMICONDUCTOR DEVICE MODELS; THERMOANALYSIS;

TAIL ELECTRON HYDRODYNAMIC (TEHD) IMPACT IONIZATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0032715129     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737463     Document Type: Article

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