Floating zone growth of Si bicrystals using seed crystals with artificially designed grain boundary configuration

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 24-27, 2005, Pages

  Usami, Noritaka ^a   Kitamura, Masayuki ^a   Sugawara, Takamasa ^a   Kutsukake, Kentaro ^a   Ohdaira, Keisuke ^a   Nose, Yoshitaro ^a   Fujiwara, Kozo ^a   Shishido, Toetsu ^a   Nakajima, Kazuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Bicrystals; Floating zone growth; Grain boundary; Si; Solar cell

Indexed keywords

CURRENT DENSITY; GRAIN BOUNDARIES; SILICON; SINGLE CRYSTALS; SOLAR CELLS; ULTRAHIGH VACUUM;

FLOATING ZONE GROWTH; GRAIN BOUNDARY CONFIGURATION; MULTICRYSTALS;

CRYSTALLINE MATERIALS;

EID: 32044441221     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L778     Document Type: Article

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