Characterization and modeling of InGaAs/InAsP thermophotovoltaic converters under high illumination intensities

Journal of Applied Physics

Volumn 101, Issue 6, 2007, Pages

  Su, Ning ^a   Fay, Patrick ^a   Sinharoy, Samar ^b   Forbes, David ^b   Scheiman, David ^c  

^a University of Notre Dame   (United States)

^b Essential Research Inc   (United States)

^c NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMITTER REGIONS; OPTICAL POWER DENSITY; THERMOPHOTOVOLTAIC CONVERTERS;

CURRENT DENSITY; ELECTROOPTICAL EFFECTS; LIGHTING; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SHORT CIRCUIT CURRENTS;

ELECTRIC CONVERTERS;

EID: 34047109110     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2713366     Document Type: Article

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