Deep donor-acceptor pair recombination in InGaAs-based heterostructures grown on InP substrates

Journal of Applied Physics

Volumn 98, Issue 9, 2005, Pages

  Gfroerer, T H ^a   Gillespie, C E ^a   Campbell, J P ^a   Wanlass, M W ^b  

^a DAVIDSON COLLEGE   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLUESHIFTS; DEEP DONOR-ACCEPTOR PAIR RECOMBINATION; DOUBLE HETEROSTRUCTURES; LATTICE MISMATCH;

ALLOYS; ELECTRON ENERGY LEVELS; GALLIUM COMPOUNDS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE;

HETEROJUNCTIONS;

EID: 27844491981     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2126153     Document Type: Article

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