Structural and electronic properties calculations of BexZn1-xSe alloy

Materials Science in Semiconductor Processing

Volumn 10, Issue 1, 2007, Pages 6-13

  Ameri, M ^a   Rached, D ^a   Rabah, M ^a   Khenata, R ^a,b   Benkhettou, N ^a   Bouhafs, B ^a   Maachou, M ^a  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b UNIVERSITÉ DE MASCARA   (Algeria)

Author keywords

Alloys; BeSe; FP LMTO; Semiconductors; ZnSe

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELASTIC MODULI; ELECTRONIC PROPERTIES; ENERGY GAP; LATTICE CONSTANTS; SEMICONDUCTING ZINC COMPOUNDS;

ELECTRON CONDUCTION; FULL POTENTIAL LINEAR MUFFIN TIN ORBITAL (FPLMTO) METHOD; HOLE CONDUCTION; VALENCE EFFECTIVE MASSES;

BERYLLIUM ALLOYS;

EID: 34047092688     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2007.01.003     Document Type: Review

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