Predicted electronic properties of zinc-blende Zn1-xMg xSe alloys

Materials Chemistry and Physics

Volumn 84, Issue 2-3, 2004, Pages 273-278

  Charifi, Z ^a   Baaziz, H ^a   Bouarissa, N ^a  

^a UNIVERSITY OF M'SILA   (Algeria)

Author keywords

Electronic properties; VCA; Zinc blende

Indexed keywords

COMPOSITION; ENERGY GAP; LEAST SQUARES APPROXIMATIONS; OPTIMIZATION; SEMICONDUCTOR MATERIALS; TERNARY SYSTEMS;

ELECTRON VALENCE BAND; VIRTUAL CRYSTAL APPROXIMATION (VCA); ZINC-BLENDE;

ZINC ALLOYS;

EID: 1342308430     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(03)00377-8     Document Type: Article

References (20)

1. Okuyama H., Nakano K., Miyajima T., Akimoto K. Jpn. J. Appl. Phys. 30:1991;L1620.
2. Jobst B., Hommel D., Lunz U., Gerhard T., Landwehr G. Appl. Phys. Lett. 69:1996;97.
3. Park S.-A., Song H.-J., Kim W.-T., Kim H.G., Jin M.-S., Kim C.-D., Yoon C.-S. J. Appl. Phys. 83:1998;3429.
4. Plazaola F., Saarinen K., Dobrzynski L., Reniewicz H., Firszt F., Szatkowski J., Meczynska H., Legowski S., Chabik S. J. Appl. Phys. 88:2000;1325.
5. Wolverson D., Bird D.M., Bradford C., Prior K.A., Cavenett B.C. Phys. Rev. B. 64:2001;113203.
6. Kobayasi T., Nara H. Bull. Coll. Med. Sci. Tohoku Univ. 2:1993;7.
7. O. Madelung (Ed.), Semiconductors - Basic Data, Springer, Berlin, 1996.
8. Kassali K., Bouarissa N. Mater. Chem. Phys. 76:2002;255. and references therein.
9. Lunz U., Schumacher C., Nurnberger J., Schull K., Gerhard A., Schussler U., Jobst B., Faschinger W., Landwehr G. Semicond. Sci. Technol. 12:1997;970.
10. Teo K.L., Feng Y.P., Li M.F., Chong T.C., Xia J.B. Semicond. Sci. Technol. 9:1994;349.
11. Lee S.J., Kwon T.S., Nahm K., Kim C.K. J. Phys.: Condens. Matter. 2:1990;3253.
12. Bouarissa N. Phys. Lett. A. 245:1998;285.
13. Chelikowsky J.R., Wagener T.J., Weaver J.H., Jin A. Phys. Rev. B. 40:1989;9644.
14. Nakwaski W. Physica B. 210:1995;1. and references therein.
15. Bhouri A., Ben Zid F., Mejri H., Ben Fredj A., Bouarissa N., Said M. J. Phys.: Condens. Matter. 14:2002;7017.
16. Ohyama T., Otsuka E., Yoshida T., Isshiki M., Igaki K. Jpn. J. Appl. Phys. 23:1984;L382.
17. Holscher H.W., Nothe A., Uihlein Ch. Phys. Rev. B. 31:1985;2379.
18. Bouarissa N. Infrared Phys. Technol. 39:1998;265.
19. Bouarissa N. Mater. Chem. Phys. 65:2000;107.
20. Richardson S.L., Cohen M.L., Louie S.G., Chelikowsky J.R. Phys. Rev. B. 33:1986;1177.