Effect of electrical contact configuration on gap-states absorption spectra by photocurrent methods in hydrogenated amorphous silicon alloys

Solar Energy Materials and Solar Cells

Volumn 70, Issue 4, 2002, Pages 459-467

  Sarr, M ^a   Brebner, J L ^b  

^a UNIVERSITÉ CHEIKH ANTA DIOP   (Senegal)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

Amorphous silicon alloys; Gap cell; Optical absorption; Schottky barrier

Indexed keywords

ELECTRIC CONTACTS; HYDROGENATION; LIGHT ABSORPTION; PHOTOCURRENTS; PHOTONS; SCHOTTKY BARRIER DIODES;

AMORPHOUS SILICON ALLOYS;

AMORPHOUS SILICON;

EID: 0036027464     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(01)00036-8     Document Type: Article

References (11)