Investigation of the M/a-Si:H/c-Si structure as a Schottky contact with a diffusion barrier layer

Solar Energy Materials and Solar Cells

Volumn 58, Issue 4, 1999, Pages 387-397

  Georgiev, S S ^a   Toneva, A ^b   Sueva, D ^c  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b CTRL LAB SOLAR ENER NEW ENER S   (Bulgaria)

^c UNIVERSITY OF SOFIA   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COST EFFECTIVENESS; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; ELECTRIC FIELDS; ELECTRONIC DENSITY OF STATES; HETEROJUNCTIONS; INTERFACES (MATERIALS); PHOTOELECTRIC CELLS; SCHOTTKY BARRIER DIODES; SOLAR CELLS;

AMORPHOUS HYDROGENATED SILICON CRYSTALLINE SILICON STRUCTURE; CAPACITANCE VOLTAGE THEORY; DIFFUSION BARRIER LAYER; SCHOTTKY CONTACT;

AMORPHOUS SILICON;

EID: 0032592970     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(99)00013-6     Document Type: Article

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