The influence of body effect and threshold voltage reduction on trench MOSFET body diode characteristics

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 217-220

  Dolny, G M ^a   Sapp, S ^a   Elbanhaway, A ^a   Wheatley, C F ^b  

^a FAIRCHILD SEMICONDUCTOR   (United States)

^b Independent Consultant   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CHANNEL CAPACITY; CHARGE CARRIERS; COMPUTER SIMULATION; DIODES; ELECTRIC NETWORK ANALYSIS;

BODY EFFECTS; CHANNEL CURRENT; DRAIN POTENTIAL; THRESHOLD VOLTAGE REDUCTION;

MOSFET DEVICES;

EID: 4944249637     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/wct.2004.239935     Document Type: Conference Paper

References (5)

1. D. Gower and J. Grant, Power MOSFETS, Theory and Applications, Wiley and Sons 1989.
2. B. J. Baliga, Power Semiconductor Devices, PWS Publishing Company 1996
3. J. Zeng et al, "optimization of the Body-Diode of Power MOSFETs for High Efficiency Synchronous Rectification", ISPSD 2000 Proceedings, pp. 145-148
4. N. Sun and A. Huang, "The Impact of Subthreshold Current on Ultra High Density Trench MOSFET for Synchronous Rectifier Application", ISPSD 2003 Proceedings, pp 358-361
5. S. M. Sze, Physics of Semiconductor Devices, Wiley Interscience, 1981