Influence of the gate internal impedance on losses in a power MOS transistor switching at a high frequency in the ZVS mode

IEEE Transactions on Power Electronics

Volumn 17, Issue 1, 2002, Pages 33-39

  Lefebvre, Stéphane ^b   Costa, François ^a,b   Miserey, Francis ^c  

^a IEEE

^b Lab d'Electricite Signaux et   (France)

^c University of Paris Cité   (France)

Author keywords

High switching frequency; Internal gate characterization; Poxer MOSFET; Source impedance; Zero voltage switching mode

Indexed keywords

CAPACITANCE; CHOPPERS (CIRCUITS); ELECTRIC IMPEDANCE; ELECTRIC LOSSES; ELECTRIC POTENTIAL; GATES (TRANSISTOR);

ZERO VOLTAGE SWITCHING (ZVS);

MOSFET DEVICES;

EID: 0036223073     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.988667     Document Type: Article

References (6)

1. A 2 MHz, 2 kW voltage-source inverter for low-temperature plasma generator: Implementation of fast switching with a third resonant circuit
2. Systematic design of high power class D switching dc-dc converter
3. Effect of FET output capacitance on ZVS of resonant converters
4. Switching with power MOSFET's and IGBTs - 50 Hz to 200 kHz
5. Comparison of the square-wave and quasiresonant topologies