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Materials Research Society Symposium Proceedings

Volumn 937, Issue , 2006, Pages 95-100

Hall effect in organic single-crystal field-effect transistors

(6) Takeya, Jun a,b Yamada, Koichi b Tsukagoshi, Kazuhito c,d Aoyagi, Yoshinobu c,e Takenobu, Taishi f,g Iwasa, Yoshihiro f,g

a OSAKA UNIVERSITY (Japan)

b CREPI (Japan)

c RIKEN (Japan)

d Japan Science and Technology Agency (Japan)

e TOKYO INSTITUTE OF TECHNOLOGY (Japan)

f TOHOKU UNIVERSITY (Japan)

g JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; HALL EFFECT; HOLE MOBILITY; SINGLE CRYSTALS; SURFACE CHARGE;

HALL BAR CONFIGURATION; HOLE ACCUMULATION; HOPPING CARRIERS; RUBRENE;

GATES (TRANSISTOR);

EID: 33947632559 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-0937-m10-06 Document Type: Conference Paper

Times cited : (1)

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