-
1
-
-
0024128603
-
Influence of porosity on the dielectric properties of AlN in the range of 30 ... 40 GHz
-
Heidinger R., and Nazare S. Influence of porosity on the dielectric properties of AlN in the range of 30 ... 40 GHz. Powder Metall. Int. 20 (1988) 30-32
-
(1988)
Powder Metall. Int.
, vol.20
, pp. 30-32
-
-
Heidinger, R.1
Nazare, S.2
-
2
-
-
33947680348
-
-
Enck, R. C., Harris, J. H., Youngman, R. A. and Nemecek, T. S., Process for making a low electrical resistively, high purity aluminum nitride electrostatic chuck, US Patent No. 6,017,485, January 25, 2000.
-
-
-
-
3
-
-
0033746980
-
The dielectric behavior of commercial polycrystalline aluminium nitride
-
Gonzalez M., and Ibarra A. The dielectric behavior of commercial polycrystalline aluminium nitride. Diamond Relat. Mater. 9 (2000) 467-471
-
(2000)
Diamond Relat. Mater.
, vol.9
, pp. 467-471
-
-
Gonzalez, M.1
Ibarra, A.2
-
4
-
-
0036965522
-
Low dielectric loss ceramics of AlN fine and nanopowders
-
Fesenko I.P., and Kuzenkova M.A. Low dielectric loss ceramics of AlN fine and nanopowders. Powder Metall. Met. Ceram. 41 (2002) 567-569
-
(2002)
Powder Metall. Met. Ceram.
, vol.41
, pp. 567-569
-
-
Fesenko, I.P.1
Kuzenkova, M.A.2
-
5
-
-
33947667591
-
-
Nishizono, K. and Oh, U., Radio wave transmittal substance and production method thereof, Japan Kokai Tokkyo Koho, Toku-Kai 2001-181049, July 3, 2001.
-
-
-
-
6
-
-
0001190584
-
Chemical vapor deposition diamond window for high-power and long pulse millimeter wave transmission
-
Kasugai A., Sakamoto K., Takahashi K., Tsuneoka M., Kariya T., Imai T., et al. Chemical vapor deposition diamond window for high-power and long pulse millimeter wave transmission. Rev. Sci. Inst. 69 (1998) 2160-2165
-
(1998)
Rev. Sci. Inst.
, vol.69
, pp. 2160-2165
-
-
Kasugai, A.1
Sakamoto, K.2
Takahashi, K.3
Tsuneoka, M.4
Kariya, T.5
Imai, T.6
-
7
-
-
0034962479
-
Development of CVD diamond r.f. windows for ECRH
-
Brandon J.R., Coe S.E., Sussmann R.S., Sakamoto K., Spörl R., Heidinger R., et al. Development of CVD diamond r.f. windows for ECRH. Fusion Eng. Des. 53 (2001) 553-559
-
(2001)
Fusion Eng. Des.
, vol.53
, pp. 553-559
-
-
Brandon, J.R.1
Coe, S.E.2
Sussmann, R.S.3
Sakamoto, K.4
Spörl, R.5
Heidinger, R.6
-
8
-
-
0035209736
-
Dielectric loss of oxide single crystals and polycrystalline analogues from 10 to 320 K
-
Alford N.M., Breeze J., Wang X., Penn S.J., Dalla S., Webb S.J., et al. Dielectric loss of oxide single crystals and polycrystalline analogues from 10 to 320 K. J. Eur. Ceram. Soc. 21 (2001) 2605-2611
-
(2001)
J. Eur. Ceram. Soc.
, vol.21
, pp. 2605-2611
-
-
Alford, N.M.1
Breeze, J.2
Wang, X.3
Penn, S.J.4
Dalla, S.5
Webb, S.J.6
-
9
-
-
33947702221
-
-
Tajima, K. and Uchimura, H., Microwave window substance, Japan Kokai Tokkyo Koho, Toku-Kai-Hei 8-295567, November 12, 1996.
-
-
-
-
10
-
-
0032648616
-
Effective sintering aids for low-temperature sintering of AlN ceramics
-
Watari K., Hwang H.J., Toriyama M., and Kanzaki S. Effective sintering aids for low-temperature sintering of AlN ceramics. J. Mater. Res. 14 (1999) 1409-1417
-
(1999)
J. Mater. Res.
, vol.14
, pp. 1409-1417
-
-
Watari, K.1
Hwang, H.J.2
Toriyama, M.3
Kanzaki, S.4
-
11
-
-
0031161853
-
High-thermal-conductivity aluminum nitride ceramics: the effect of thermodynamic, kinetic, and microstructural factors
-
Jackson T.B., Virkar A.V., More K.L., Dinwiddie Jr. R.B., and Culter R.A. High-thermal-conductivity aluminum nitride ceramics: the effect of thermodynamic, kinetic, and microstructural factors. J. Am. Ceram. Soc. 80 (1997) 1421-1435
-
(1997)
J. Am. Ceram. Soc.
, vol.80
, pp. 1421-1435
-
-
Jackson, T.B.1
Virkar, A.V.2
More, K.L.3
Dinwiddie Jr., R.B.4
Culter, R.A.5
-
13
-
-
0036967845
-
Microstructural characterization of high-thermal-conductivity aluminum nitride ceramic
-
Nakano H., Watari K., Hayashi H., and Urabe K. Microstructural characterization of high-thermal-conductivity aluminum nitride ceramic. J. Am. Ceram. Soc. 85 (2002) 3093-3095
-
(2002)
J. Am. Ceram. Soc.
, vol.85
, pp. 3093-3095
-
-
Nakano, H.1
Watari, K.2
Hayashi, H.3
Urabe, K.4
-
14
-
-
33947696329
-
-
Koyama, T. and Ishii, M., Corrosion-resistant substance for plasma and production method thereof, Japan Kokai Tokkyo Koho, Toku-Kai 2001-233676, August, 28, 2001.
-
-
-
-
16
-
-
0031190431
-
Effect of porosity and grain size on the microwave dielectric properties of sintered alumina
-
Penn S.J., Alford N.M., Templeton A., Wang X., Xu M., Reece M., et al. Effect of porosity and grain size on the microwave dielectric properties of sintered alumina. J. Am. Ceram. Soc. 80 (1997) 1885-1888
-
(1997)
J. Am. Ceram. Soc.
, vol.80
, pp. 1885-1888
-
-
Penn, S.J.1
Alford, N.M.2
Templeton, A.3
Wang, X.4
Xu, M.5
Reece, M.6
-
17
-
-
0030129170
-
Morphological effect of second phase on the thermal conductivity of AlN ceramics
-
Kim W.-J., Kim D.K., and Kim C.H. Morphological effect of second phase on the thermal conductivity of AlN ceramics. J. Am. Ceram. Soc. 79 (1996) 1066-1072
-
(1996)
J. Am. Ceram. Soc.
, vol.79
, pp. 1066-1072
-
-
Kim, W.-J.1
Kim, D.K.2
Kim, C.H.3
-
18
-
-
33745305575
-
Effects of annealing on dielectric loss and microstructure of aluminum nitride ceramics
-
Kume S., Yasuoka M., Omura N., and Watari K. Effects of annealing on dielectric loss and microstructure of aluminum nitride ceramics. J. Am. Ceram. Soc. 88 (2005) 3229-3231
-
(2005)
J. Am. Ceram. Soc.
, vol.88
, pp. 3229-3231
-
-
Kume, S.1
Yasuoka, M.2
Omura, N.3
Watari, K.4
-
19
-
-
33645534800
-
Annealing effect on dielectric property of AlN ceramics
-
Kume S., Yasuoka M., Omura N., and Watari K. Annealing effect on dielectric property of AlN ceramics. J. Eur. Ceram. Soc. 26 (2006) 1831-1834
-
(2006)
J. Eur. Ceram. Soc.
, vol.26
, pp. 1831-1834
-
-
Kume, S.1
Yasuoka, M.2
Omura, N.3
Watari, K.4
-
20
-
-
84928809109
-
A dielectric resonator method of measuring inductive in the millimeter range
-
Hakki B.W., and Coleman P.D. A dielectric resonator method of measuring inductive in the millimeter range. IRE Trans. Microwave Theory Tech. MTT-8 (1960) 402-410
-
(1960)
IRE Trans. Microwave Theory Tech.
, vol.MTT-8
, pp. 402-410
-
-
Hakki, B.W.1
Coleman, P.D.2
-
21
-
-
20444495559
-
Sinetring of AlN-densification, grain growth and removal of grain boundary phase
-
Mizutani N., and Shinozaki K. Sinetring of AlN-densification, grain growth and removal of grain boundary phase. Ceramics 26 (1991) 738-743
-
(1991)
Ceramics
, vol.26
, pp. 738-743
-
-
Mizutani, N.1
Shinozaki, K.2
-
22
-
-
0024765004
-
Thermodymanic and kinetics of oxygen removal on the thermal conductivity of aluminum nitride
-
Virkar A.V., Barrett T., Raymond J., and Cutler A. Thermodymanic and kinetics of oxygen removal on the thermal conductivity of aluminum nitride. J. Am. Ceram. Soc. 72 (1989) 2031-2042
-
(1989)
J. Am. Ceram. Soc.
, vol.72
, pp. 2031-2042
-
-
Virkar, A.V.1
Barrett, T.2
Raymond, J.3
Cutler, A.4
-
23
-
-
33947689843
-
-
Noguchi, T. and Mizuno, M. Kogyo Kogaku Zashi, 1967, 70, 839, Phase Diagrams for Ceramists Fig. 4370.
-
-
-
-
24
-
-
28644431817
-
Measurement of thermo-optic properties of Y3Al5O12, Lu3Al5O12, YAIO3, LiYF4, LiLuF4, BaY2F8, KGd(WO4)2, and KY(WO4)2 laser crystals in the 80-300 °K temperature range
-
103514-1-14
-
Aggarwal R.L., Ripin D.J., Ochoa J.R., and Fan T.Y. Measurement of thermo-optic properties of Y3Al5O12, Lu3Al5O12, YAIO3, LiYF4, LiLuF4, BaY2F8, KGd(WO4)2, and KY(WO4)2 laser crystals in the 80-300 °K temperature range. J. Appl. Phys. 98 (2005) 103514-1-14
-
(2005)
J. Appl. Phys.
, vol.98
-
-
Aggarwal, R.L.1
Ripin, D.J.2
Ochoa, J.R.3
Fan, T.Y.4
-
25
-
-
0037200746
-
Properties of GaN and related compounds studied by means of Raman scattering
-
Harima H. Properties of GaN and related compounds studied by means of Raman scattering. J. Phys. Condens. Matter 14 (2002) R967-R993
-
(2002)
J. Phys. Condens. Matter
, vol.14
-
-
Harima, H.1
-
26
-
-
0032679901
-
Complex permittivity of some ultralow loss dielectric crystals at cryogenic temperatures
-
Krupka J., Derzakowski K., Tobar M., Hartnett J., and Geyer R.G. Complex permittivity of some ultralow loss dielectric crystals at cryogenic temperatures. Meas. Sci. Technol. 10 (1999) 387-392
-
(1999)
Meas. Sci. Technol.
, vol.10
, pp. 387-392
-
-
Krupka, J.1
Derzakowski, K.2
Tobar, M.3
Hartnett, J.4
Geyer, R.G.5
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