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Applied Physics Letters

Volumn 90, Issue 11, 2007, Pages

Photoluminescence from low temperature grown InAs/GaAs quantum dots

(4) Sreenivasan, D a Haverkort, J E M a Eijkemans, T J a Notzel R a

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ENERGY GAP; INDIUM ARSENIDE; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE;

OPTICAL QUALITY; POSTGROWTH ANNEALING; TRAPPING EFFICIENCY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947321576 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2713803 Document Type: Article

Times cited : (10)

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