Layer-by-layer growth and island formation in CdSe/ZnSe heteroepitaxy

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 310-314

  Mahapatra, S ^a   Kiessling, T ^a   Margapoti, E ^a   Astakhov, G V ^a   Ossau, W ^a   Worschech, L ^a   Forchel, A ^a   Brunner, K ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

A1. Atomic force microscopy; A1. Low dimensional structures; A3. Molecular beam epitaxy; B3. Semiconducting II VI materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR QUANTUM DOTS; ZINC COMPOUNDS;

LOW DIMENSIONAL STRUCTURES; POTENTIAL BARRIERS; ROUGHENING; SEMICONDUCTING II-VI MATERIALS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 33947321564     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.09.014     Document Type: Article

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