CdSe/ZnSe quantum dots formed by low temperature epitaxy and in-situ annealing: Properties and growth optimization

Acta Physica Polonica A

Volumn 108, Issue 5 PART II, 2005, Pages 769-776

  Mahapatra, S ^a   Schumacher, C ^a   Kiessling, T ^a   Astakhov, G V ^a   Bass, U ^a   Ossau, W ^a   Geurts, J ^a   Brunner, K ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

AREAL DENSITY; GROWTH OPTIMIZATION; GROWTH TECHNIQUES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 27944446935     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/aphyspola.108.769     Document Type: Conference Paper

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